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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV904 UHF power transistor
Product specification Supersedes data of 1996 Feb 08 1997 Jul 15
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability * Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS * Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 960 f1 = 960; f2 = 960.1 VCE (V) 26 26 PL (W) 5 5 (PEP) Gp (dB) 13 typ. 15.5 C (%) 50 typ. 40
1 Top view 4
MSA467
BLV904
PINNING - SOT409B PIN 1, 4, 5, 8 2, 3 6, 7 emitter base collector DESCRIPTION
8 handbook, halfpage
5
c b e
Fig.1 Simplified outline and symbol.
dim (dBc) - typ. -30
1997 Jul 15
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) collector current (average) total power dissipation storage temperature operating junction temperature Tmb = 25 C; note 1 open base open collector CONDITIONS open emitter - - - - - - -65 - MIN.
BLV904
MAX. 60 28 4 1.2 1.2 17 +150 200 V V V A A
UNIT
W C C
1. Transistor with metallized ground plane mounted on a printed-circuit board, see "Mounting and soldering recommendations in the General part of handbook SC19a".
handbook, halfpage
10
MGD934
handbook, halfpage
16
MGD935
Ptot (W) IC (A) 12
1
(1)
8
4
10-1
1
10
VCE (V)
102
0 0 40 80 120 160 200 Ts (C)
(1) Ts = 60 C.
Fig.3 Fig.2 DC SOAR.
Total power dissipation as a function of the soldering point temperature.
1997 Jul 15
3
Philips Semiconductors
Product specification
UHF power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Note PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 17 W; Tmb = 25 C; note 1 VALUE 10
BLV904
UNIT K/W
1. Transistor with metallized ground plane mounted on a printed-circuit board, see "Mounting and soldering recommendations in the General part of handbook SC19a". CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 5 mA open base; IC = 10 mA open collector; IE = 0.5 mA VCE = 26 V; VBE = 0 VCE = 26 V; IC = 600 mA VCB = 26 V; IE = ie = 0; f = 1 MHz VCE = 26 V; IC = 0; f = 1 MHz MIN. 60 28 4 - 30 - - TYP. - - - - - 6 2.5 MAX. UNIT - - - 1.3 120 - - pF pF V V V mA
handbook, halfpage
120
MGD936
handbook, halfpage
50
MGD937
hFE
(1) (2)
C (pF) 40
80
30
20 40 10
Cc Cre 0 10 20 30 40 50 VCE (V)
0 0 0.4 0.8 1.2 IC (A) 1.6
0
(1) VCE = 26 V; tp = 500 s; = < 1 %. (2) VCE = 10 V.
f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Capacitance as a function of collector-emitter voltage; typical values.
1997 Jul 15
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 960 f1 = 960; f2 = 960.1 VCE (V) 26 26 ICQ (mA) 15 15 PL (W) 5 5 (PEP) Gp (dB) 13 typ. 15.5 typ. 15.5 C (%)
BLV904
dim (dBc) - typ. -30
50 typ. 55 typ. 40
Ruggedness in class-AB operation The BLV904 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 960 MHz; VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 C.
handbook, halfpage
20 Gp (dB) 16
MGD938
Gp
100 C (%) 80
handbook, halfpage
8
MGD939
PL (W) 6
12
C
60 4
8
40 2
4
20
0 0 2 4 6 PL (W) 8
0
0 0 0.1 0.2 PD (W) 0.3
CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 960 MHz; Tmb = 25 C.
CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 960 MHz; Tmb = 25 C.
Fig.6
Power gain and collector efficiency as functions of load power; typical values.
Fig.7
Load power as a function of drive power; typical values.
1997 Jul 15
5
Philips Semiconductors
Product specification
UHF power transistor
BLV904
handbook, halfpage
20
MGD940
80 C (%)
handbook, halfpage
6
MGD941
Gp (dB) 16 Gp
60
PL (PEP) (W) 4
12
C
40
2
8
20
4 0 2 4 PL (PEP) (W) 6
0
0 0 0.05 0.1 0.2 0.15 PD (PEP) (W)
VCE = 26 V; ICQ = 15 mA; f1 = 960 MHz; f2 = 960.1 MHz. VCE = 26 V; ICQ = 15 mA; f1 = 960 MHz; f2 = 960.1 MHz.
Fig.8
Power gain and collector efficiency as functions of peak envelope load power; typical values.
Fig.9
Peak envelope load power as a function of peak envelope drive power; typical values.
handbook, halfpage
-20
MGD942
handbook, halfpage
-20
MGD943
dim (dBc) -30
(1)
dim (dBc) -30
-40
(2)
d5 d3
-40 -50
(3)
d7
-50 0 2 4 PL (PEP) (W) 6
-60 0 2 4 PL (PEP) (W) 6
VCE = 26 V; f1 = 960 MHz; f2 = 960.1 MHz. (2) ICQ = 40 mA. (1) ICQ = 15 mA.
(3) ICQ = 60 mA. VCE = 26 V; ICQ = 15 mA; f1 = 960 MHz; f2 = 960.1 MHz.
Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values.
Fig.11 Intermodulation distortion as a function of peak envelope load power; typical values.
1997 Jul 15
6
Philips Semiconductors
Product specification
UHF power transistor
Test circuit information
BLV904
handbook, full pagewidth
+Vbias R1 +VC L5 L4 C6 C7 C8 C9 C19 C18 C17 C16 C15 C14 L15 L14 R2 C13
C5
input
,,,,, ,,,,, ,,,,, ,,,,,
C1 C2 L1 L3 C3 L2
DUT
C4
,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,,
C10 C11 L9 L6 L7 L8 L10 L11 L12 L13
C12 output
MGD962
f = 960 MHz.
Fig.12 Class-AB test circuit.
1997 Jul 15
7
Philips Semiconductors
Product specification
UHF power transistor
List of components (see Figs 12 and 13) COMPONENT C1, C12 C2 C3 C4 C5, C6, C13, C18 C7, C17 C9, C19 C10 C11 L1 L2 L3, L6 L4 L5, L15 L7 L8 L9 L10 L11 L12 L13 L14 R1 DUT Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor, note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 tantalum SMD capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 3 stripline; note 3 stripline; note 3 RF-choke grade 4S2 ferroxcube chip-bead stripline; note 3 stripline; notes 3 and 4 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 5 turns enamelled 1 mm copper wire metal film resistor transistor 100 ; 0.4 W BLV904 46.3 4.3 4.3 34.3 34.3 34.3 6.7 12.22 x 0.7 mm 7.58 x 16.1 mm 10 x 16.1 mm 1.9 x 1.2 mm 3.2 x 1.2 mm 4.8 x 1.2 mm 8 x 9.9 mm VALUE 24 pF 3.3 pF 2.2 pF 1.6 pF 200 pF 110 pF 100 nF 10 F; 35 V 1.8 pF 13 pF 50 4.9 24.5 0.22 H 8.2 x 0.65 mm 6 x 14 mm 1.5 x 2 mm DIMENSIONS
BLV904
CATALOGUE No.
C8, C14, C15, C16 multilayer ceramic chip capacitor
2222 581 16641
4330 030 36301
3. The striplines are on a double copper-clad printed-circuit board with epoxy fibreglass dielectric (r = 10.2); thickness 0.64 mm. 4. Not connected over total length; only 7.58 mm connected.
1997 Jul 15
8
Philips Semiconductors
Product specification
UHF power transistor
BLV904
handbook, full pagewidth
65
40
+Vbias C9 C8 C6 R1 L5 C5 L4 C2 L1 C1 C3 L3 L8 L2 C4 L6 L7 L9
+VC
+
C7
+
C18 C16 C14
C19 C17 C15
L15 C13
R2 L14
L10 L11 L12 C10 C11 C12 L13
MGD964
Dimensions in mm. f = 960 MHz. The components are situated on one side of the copper-clad epoxy fibreglass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.13 Component layout for class-AB test circuit.
1997 Jul 15
9
Philips Semiconductors
Product specification
UHF power transistor
BLV904
handbook, halfpage
4
MGD944
handbook, halfpage
24
MGD945
Zi () 3
xi
ZL () 16
XL
ri 2 RL
8 1
0 800
850
900
950
f (MHz)
1000
0 800
850
900
950
f (MHz)
1000
VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 C.
VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 C.
Fig.14 Input impedance as a function of frequency (series components); typical values.
Fig.15 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
20 Gp (dB)
MGD946
handbook, halfpage
16
Zi ZL
MBA451
12
Fig.17 Definition of transistor impedance.
8
MOUNTING RECOMMENDATIONS
4
0 800
850
900
950
f (MHz)
1000
VCE = 26 V; ICQ = 15 mA; PL = 5 W; Tmb = 25 C.
Fig.16 Power gain as a function of frequency; typical values.
Heat from the device is transferred via the leads and the metallized underside. For optimum heat transfer it is recommended that the transistor be mounted on a grounded metallized area on the component side of the printed-circuit board. This metallized area should contain a large number of metallized, solder-filled through-holes. The non-component side of the printed-circuit board forms a ground plane. When the printed-circuit board is mounted on the heatsink using heatsink compound, a thermal resistance from mounting base to heatsink of 0.9 K/W can be attained. 10
1997 Jul 15
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Ceramic surface mounted package; 8 leads
BLV904
SOT409B
D
A
D2
B
H1 8 5
w2 B L
c
H
E2
E
A 1 e b 4 w1
Q1
0
2.5 scale
5 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.36 2.06 0.093 0.081 b 0.58 0.43 0.023 0.017 c 0.15 0.10 0.006 0.004 D 5.94 5.03 0.234 0.198 D2 5.16 5.00 0.203 0.197 E 4.93 4.01 0.194 0.158 E2 4.14 3.99 0.163 0.157 e 1.27 0.050 H 7.47 7.26 0.294 0.286 H1 4.39 4.24 0.173 0.167 L 0.84 0.69 0.033 0.027 Q1 0.10 0.00 0.004 0.000 w1 0.25 0.010 w2 0.25 0.010
2 0 2 0
OUTLINE VERSION SOT409B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-01-27
1997 Jul 15
11
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV904
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 15
12
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV904
1997 Jul 15
13
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV904
1997 Jul 15
14
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV904
1997 Jul 15
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/02/pp16
Date of release: 1997 Jul 15
Document order number:
9397 750 02545

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